Writing on software design, company building, and the aerospace industry.

S. Koelling, S. Assali, D. Isheim, D. N. Seidman, and O. Moutanabbir Hidden Structures in Atom Probe Tomography

  B. N. Carnio, O. Moutanabbir, and A. Y. Elezzabi Beyond the pulse: Unveiling the intricate dynamics of electro-optic sampling

  B. N. Carnio, M. Zhang, O. Moutanabbir, and A. Y. Elezzabi A phase-correction approach for enhancing electro-optic sampling in highly nonlinear and dispersive birefringent crystals Applied Physics LettersVol. xx, xxxxxxx (2024)

  B. N. Carnio, O. Moutanabbir, and A. Y. Elezzabi Advanced Modeling of Electro-Optic Sampling: Nonlinear Vectoral-Field Solutions to Maxwell's Equations Advanced Physics ResearchVol. xx, 2400034 (2024)

C. Lemieux-Leduc, M. R.M. Atalla, S. Assali, S. Koelling, P. Daoust, L. Luo, G. Daligou, J. Brodeur, S. Kéna-Cohen, Y.-A. Peter, and O. Moutanabbir Transfer-printed multiple GeSn membrane mid-infrared photodetectors IEEE Journal of Selected Topics in Quantum ElectronicsVol. xx, xxxx (2024)

M. Rossi, T. A. J. van Schijndel, P. Lueb, G. Badawy, J. Jung, W. Peeters, S. Koelling, O. Moutanabbir, M. A. Verheijen, and E. P.A.M. Bakkers Stemless InSb nanowire networks and nanoflakes grown on InP Nanotechnology Vol. 35, 415602 (2024).

R. Soref, F. DeLeonardis, O. Moutanabbir, and G. Daligou Remote Electric Powering by Germanium Photovoltaic Conversion of an Erbium-Fiber Laser Beam ChipVol. 3, 100099 (2024).

P. Del Vecchio and O. Moutanabbir Light-Hole Spin Confined in Germanium Physical Review BVol. 110, 045409 (2024).

L. Luo, M. R. M. Atalla, S. Assali, S. Koelling, and O. Moutanabbir* Mid-infrared top-gated Ge/Ge0.82Sn0.18 nanowire phototransistors Advanced Optical Materials Vol. 12, 2400096 (2024).

M. R. M. Atalla, C Lemieux-Leduc, S. Assali, S. Koelling, and P. Daoust, O. Moutanabbir* Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon APL Photonics Vol. 9, 056103 (2024).

L. Luo, M. R. M. Atalla, S. Assali, S. Koelling, G. Daligou, and O. Moutanabbir* Mid-infrared imaging using strain-relaxed Ge1−xSnx semiconductors grown on 20 nm Ge nanowires Nano Letters Vol. 24, 4979 (2024).

R. Soref, F. DeLeonardis, G. Daligou, and O. Moutanabbir Directed High-Energy Infrared Laser Beams for Photovoltaic Generation of Electric Power at Remote Locations APL Energy Vol. 2, 026101 (2024).

M. R. M. Atalla, S. Assali, G. Daligou, A. Attiaoui, S. Koelling, and O. Moutanabbir* Continuous-wave GeSn light emitting diodes on silicon with 2.5 μm room-temperature emission ACS Photonics Vol. 11, 1335 (2024).

  B. N. Carnio, B. Shahriar, A. Attiaoui, M. R. M. Atalla, S. Assali, O. Moutanabbir, and A. Y. Elezzabi Probing the infrared properties of a p‑doped Ge0.94Sn0.06 thin film via polarization-dependent FTIR spectroscopy Applied Physics Letters Vol. 124, 072102 (2024).

O. Moutanabbir, S. Assali, A. Attiaoui, G. Daligou, P. Daoust, P. Del Vecchio, S. Koelling, L. Luo, N. Rotaru Nuclear Spin-Depleted, Isotopically Enriched  70Ge/28Si70Ge Quantum Wells Advanced MaterialsVol. 36, 2305703 (2024).

  B. N. Carnio, O. Moutanabbir, and A. Y. Elezzabi Terahertz Time-Domain Spectroscopy and Dispersive Fourier Transform Spectroscopy: Two Sides of the Same Coin Journal of Infrared, Millimeter, and Terahertz Waves Vol. 44, 912 (2023).

G. Daligou, A. Attiaoui, A. Assali, P. Del Vecchio, and O. Moutanabbir* Radiative Carrier Lifetime in Ge1−xSnx Mid-Infrared Emitters Physical Review AppliedVol. 20, 064001 (2023).

Y. Kim, S. Assali, H.-J. Joo, S. Koelling, M. Chen, L. Luo, X. Shi, D. Burt, Z. Ikonic, D. Nam, and O. Moutanabbir Short-wave infrared cavity resonances in a single GeSn nanowire Nature CommunicationsVol. 14, 4393 (2023).

G. Daligou, R. Soref, A. Attiaoui, J. Hossai, M. R. M. Atalla, P. Del Vecchio, and O. Moutanabbir* Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon IEEE Journal of PhotovoltaicsVol. 13, 728 (2023).

A. Attiaoui, G. Daligou, S. Assali, O. Skibitzki, T. Schroeder, and O. Moutanabbir* Polarization-Tuned Fano Resonances in All-Dielectric Short-Wave Infrared Metasurface Advanced MaterialsVol. 35, 2300595 (2023).

M. R. M. Atalla, Y. Kim, S. Assali, D. Burt, D. Nam, and O. Moutanabbir* Extended-SWIR GeSn LEDs with Reduced Footprint and Efficient Operation Power ACS PhotonicsVol. 10, 1649 (2023).

G. Fettu, J. E. Sipe, and O. Moutanabbir* Mid-Infrared Optical Spin Injection and Coherent Control Physical Review B Vol. 107, 165202 (2023).

P. Del Vecchio and O. Moutanabbir* Light-Hole Gate-Defined Spin-Orbit Qubit ***Physical Review B (Letter)***Vol. 107, L161406 (2023).

 B. N. Carnio, M. Zhang, K. T. Zawilski, P. G. Schunemann, O. Moutanabbir, and A. Y. Elezzabi Phase-resolved high-frequency terahertz radiation produced in a (110) ZnGeP2 crystal using intra-pulse difference frequency generation Scientific ReportsVol. 13, 8161 (2023).

  B. N. Carnio, O. Moutanabbir, and A. Y. Elezzabi A versatile algorithm for optimizing the performance of Fourier transform infrared spectroscopy systems Applied OpticsVol. 62, 4518 (2023).

  B. N. Carnio, K. T. Zawilski, P. G. Schunemann, O. Moutanabbir, and A. Y. Elezzabi CdSiP2: An emerging crystal for electro-optic sampling from terahertz to the infrared spectrum ACS Applied Optical MaterialsVol. xx, xxx (2023).

  B. N. Carnio, K. T. Zawilski, P. G. Schunemann, O. Moutanabbir, and A. Y. Elezzabi 17-32 terahertz radiation generation using a (110) CdSiP2 chalcopyrite crystal Optics LettersVol. 48, 1200 (2023).

M. R. M. Atalla, S. Assali, S. Koelling, A. Attiaoui, O. Moutanabbir* Dark current in monolithic extended-SWIR GeSn PIN photodetectors Applied Physics Letters Vol. 122, 031103 (2023).

  B. N. Carnio, M. Zhang, P. G. Schunemann, O. Moutanabbir, and A. Y. Elezzabi Emission and sensing of ultrashort high-frequency terahertz electric fields using a GaSe crystal Optics ExpressVol. 31, 3304 (2023).

  B. N. Carnio, O. Moutanabbir, and A. Y. Elezzabi Nonlinear photonic waveguides: A versatile platform for terahertz radiation generation (a review) Laser and Photonics ReviewsVol. 17, 2200138 (2023).

S. Koelling, M. P. Losert, B. Paquelet Wuetz, G. Scappucci, and O. Moutanabbir Three-dimensional atomic-scale tomography of buried semiconductor heterointerfaces Advanced Materials InterfacesVol. 10, 2201189 (2023).

B. Paquelet Wuetz, M. P. Losert, S. Koelling, L. E. A. Stehouwer, A.-M. J. Zwerver, S. G.J. Philips, M. T. Mądzik, X. Xue, G. Zheng, M. Lodari, S. V. Amitonov, N. Samkharadze, A. Sammak, L. M. K. Vandersypen, R. Rahman, S. N. Coppersmith, O. Moutanabbir, M. Friesen, G. Scappucci Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots Nature CommunicationsVol. 13, 7730 (2022).

S. Assali, A. Attiaoui, S. Koelling, M. R. M. Atalla, A. Kumar, J. Nicolas, C. Lemieux-Leduc, and O. Moutanabbir* Micrometer-thick, atomically random SiGeSn for silicon-integrated infrared optoelectronics Journal of Applied Physics Vol. 132, 1953095 (2022).

S. Assali, S. Koelling, Z. Abboud, J. Nicolas, A. Attiaoui, and O. Moutanabbir 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon Journal of Applied Physics Vol. 132, 175304 (2022).

A. Attiaoui, G. Fettu, S. Mukherjee, M. Bauer, O. Moutanabbir* Electronic Signature of Sub-nanometer Interfacial Broadening in Heterostructures Nano LettersVol. 22, 7080 (2022).

  B. N. Carnio, K. T. Zawilski, P. G. Schunemann, O. Moutanabbir, and A. Y. Elezzabi The coming age of pnictide and chalcogenide ternary crystals in the terahertz frequency regime IEEE Transactions on Terahertz Science and Technology Vol. 12, 433 (2022).

D. Burt, H.-J. Joo, Y. Kim, Y. Jung, M. Chen, M. Luo, S. J. Parluhutan, D.-H. Kang, S. Assali, L. Zhang, B. Son, C. S. Tan, O. Moutanabbir, Z. Ikonic, Y.-C. Huang, and D. Nam Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain Applied Physics LettersVol. 120, 202103 (2022).

S. Assali, A. Attiaoui, P. Del Vecchio, S. Mukherjee, J. Nicolas, O. Moutanabbir* A Light-Hole Germanium Quantum Well on Silicon Advanced MaterialsVol. 34, 2201192 (2022).

S. Singh, S. Mukherjee, S. Mukherjee, S. Assali, L. Luo, S. Das, O. Moutanabbir, and S. K. Ray Ge-Ge0.92Sn0.08 core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication Applied Physics LettersVol. 120, 171110 (2022).

Y. Jung, D. Burt, L. Zhang, Y. Kim, H.-J. Joo, M. Chen, S. Assali, O. Moutanabbir, C. S. Tan, and D. Nam Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density Photonics ResearchVol. 10, 1332 (2022).

M. R. M. Atalla, S. Assali, S. Koelling, A. Attiaoui, O. Moutanabbir* High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response ACS Photonics Vol. 9, 1425 (2022).

L. Luo, S. Assali, M. R. M. Atalla, S. Koelling, A. Attiaoui, S. Marti, J. Arbiol, and O. Moutanabbir* Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires ACS Photonics Vol. 9, 914 (2022).

S. Abdi, S. Assali, M. R.M. Atalla, S. Koelling, J. M. Warrender, and O. Moutanabbir* Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable Ge0.89Sn0.11 Journal of Applied PhysicsVol. 131, 105304 (2022).

P. Perla, A. Faustmann, S. Koelling, P. Zellekens, R. Deacon, H. A. Fonseka, J. Kölzer, Yuki Sato, A. M. Sanchez, O. Moutanabbir, K. Ishibashi, D. Grützmacher, M. Ion Lepsa, T. Schäpers Te-doped selective-area grown InAs nanowires for superconducting hybrid devices Physical Review MaterialsVol. 6, 024602 (2022).

G. Badawy, B. Zhang, T. Rauch, J. Momand, S. Koelling, J. Jung, S. Gazibegovic, O. Moutanabbir, B. J. Kooi, S. Botti, M. A. Verheijen, S. M. Frolov, and E. P.A.M. Bakkers Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires Advanced Science Vol. 9, 2105722 (2022).

S. G. Schellingerhout, E. de Jong, M. Gomanko, X. Guan, M. S.M. Hoskam, S. Koelling, O. Moutanabbir, M. A. Verheijen, S. M. Frolov, E. P.A.M. Bakkers Growth of PbTe nanowires by Molecular Beam Epitaxy Materials for Quantum Technology Vol. 2, 015001 (2022).

  B. N. Carnio, A. Attiaoui, S. Assali, O. Moutanabbir, and A. Y. Elezzabi Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss IEEE Transactions on Terahertz Science and Technology Vol. 12, 385 (2022).

Y. Kim, S. Assali, D. Burt, Y. Jung, H.-J. Joo, M. Chen, Z. Ikonic, O. Moutanabbir, and D. Nam Enhanced GeSn Microdisk Lasers Directly Released on Si Advanced Optical MaterialsVol. 10, 2101213 (2022).

S. Mukherjee, S. Assali, and O. Moutanabbir* Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects Nano Letters Vol. 21, 9882 (2021).

H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam 1D photonic crystal direct bandgap GeSn-on-insulator laser Applied Physics Letters Vol. 119, 201101 (2021).

Q. An, O. Moutanabbir, and H. Guo Moiré Patterns of Twisted Bilayer Antimonene and their Structural and Electronic Transitions NanoscaleVol. 13, 13427 (2021).

S. Mukherjee, M. Wajs, M. de la Mata, U. Givan, S. Senz, J. Arbiol, S. Francoeur, O. Moutanabbir* Disentangling Phonon Channels in Nanoscale Thermal Transport Physical Review BVol. 104, 075429 (2021).

L. Groell, A. Attiaoui, S. Assali, O. Moutanabbir* Combined Iodine-and Sulfur-based Treatments for an Effective Passivation of GeSn Surface Journal of Physical Chemistry CVol. 125, 9516 (2021).

O. Moutanabbir*, S. Assali, X. Gong, E. O'Reilly, C. Broderick, B. Marzban, J. Witzens, W. Du, S.-Q. Yu, A. Chelnokov, D. Buca, D. Nam Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors Applied Physics LettersVol. 118, 110502 (2021). Invited Perspective

S. Assali, A. Dijkstra, É. Bouthillier, A. Attiaoui, J. E. M. Haverkort, and O. Moutanabbir* Mid-infrared emission and absorption in strained and relaxed direct bandgap Ge1-xSnx semiconductors Physical Review AppliedVol. 15, 024031 (2021).

A. Attiaoui, É. Bouthillier, G. Daligou, A. Kumar, S. Assali, O. Moutanabbir* Extended Short-Wave Infrared Absorption in Group IV Nanowire Arrays Physical Review AppliedVol. 15, 014034 (2021).

M. R. M. Atalla, S. Assali, A. Attiaoui, C. Lemieux-Leduc, A. Kumar, S. Abdi, O. Moutanabbir* All-Group IV transferrable membrane mid-infrared photodetectors Advanced Functional MaterialsVol. 31, 2006329 (2021)

J. S. Rathore, A. Nanwani, S. Mukherjee, S. Das, O. Moutanabbir, S. Mahapatra Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn Journal of Physics D: Applied PhysicsVol. 54, 185105 (2021)

M. Fortin-Deschênes, H. Zschiesche, T. O. Menteş, A. Locatelli, R. M. Jacobberger, F. Genuzio, M. J Lagos, D. Biswas, C. Jozwiak, J. A Miwa, S. Ulstrup, A. Bostwick, E. Rotenberg, M. S Arnold, G. A Botton, O. Moutanabbir* Pnictogens Allotropy and Phase Transformation during van der Waals Growth Nano Letters Vol. 20, 8258 (2020)

Patrick Del Vecchio, Mario Lodari, Amir Sammak, Giordano Scappucci, Oussama Moutanabbir* Vanishing Zeeman energy in a two-dimensional hole gas Physical Review BVol. 102, 115304 (2020)

Jérôme Nicolas, Simone Assali, Samik Mukherjee, Andriy Lotnyk, Oussama Moutanabbir* Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn Crystal Growth and Design Vol. 20, 3493 (2020).

T. Grange, S. Mukherjee, G. Capellini, M. Montanari, L. Persichetti, L. Di Gaspare, S. Birner, A. Attiaoui, O. Moutanabbir, M. Virgilio, M. De Seta Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering Physical Review AppliedVol. 13, 044062 (2020).

Nils von den Driesch, Stephan Wirths, Rene Troitsch, Gregor Mussler, Uwe Breuer, Oussama Moutanabbir, Detlev Grützmacher, Dan Buca Thermally activated diffusion and lattice relaxation in (Si)GeSn materials Physical Review MaterialsVol. 4, 033604 (2020).

Luca Persichetti, Michele Montanari, Chiara Ciano, Luciana Di Gaspare, Michele Ortolani, Leonetta Baldassarre, Marvin Zoellner, Samik Mukherjee, Oussama Moutanabbir, Giovanni Capellini, Michele Virgilio, Monica De Seta Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells CrystalsVol. 10, 179 (2020).

Matthieu Fortin‐Deschênes, Olga Waller, Qi An, Maureen J Lagos, Gianluigi A Botton, Hong Guo, Oussama Moutanabbir* Two-Dimensional Antimony-Arsenic Alloys SmallVol. 127, 1906540 (2020).

Q. An, M. Fortin-Deschênes, G. Yu, O. Moutanabbir, H. Guo Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys Journal of Applied Physics Vol. 127, 025305 (2020).

S. Mukherjee, A. Attiaoui, M. Bauer, and O. Moutanabbir* 3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices ACS Applied Materials and InterfacesVol. 12, 1728 (2020).

É. Bouthillier, S. Assali, J. Nicolas, and O. Moutanabbir* Decoupling the effects of composition and strain on the vibrational modes of GeSn Semiconductor Science and TechnologyVol. 35, 09006 (2020).

 S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir Vacancy complexes in nonequilibrium germanium-tin semiconductors Applied Physics LettersVol. 114, 251907 (2019).

M. Fortin-Deschênes, R. M. Jacobberger, C. -A. Deslauriers, O. Waller, É. Bouthillier, M. S. Arnold, and O. Moutanabbir* Dynamics of Antimonene-Graphene van der Waals Growth Advanced MaterialsVol. 31, 1900569 (2019).

R. M. Jacobberger, E. A. Murray, M. Fortin-Deschênes, F. Göltl, W. A. Behn, Z. J. Krebs, P. L. Levesque, D. Savage, C. Smoot, M. Lagally, P. Desjardins, R. Martel, V. Watson Brar, O. Moutanabbir, M. Mavrikakis, M. S. Arnold Alignment of semiconducting graphene nanoribbons on vicinal Ge(001) NanoscaleVol. 14, 4864 (2019).

S. Assali, J. Nicolas, and O. Moutanabbir* Enhanced Sn incorporation in GeSn epitaxial layers via strain relaxation Journal of Applied Physics Vol. 125, 025304 (2019).

S. Assali, A. Attiaoui, S. Mukherjee, J. Nicolas, and O. Moutanabbir* TEOS layers for low temperature processing of group IV optoelectronic devices Journal of Vacuum Science & Technology B Vol. 36, 061204 (2018)

S. Assali, J. Nicolas, S. Mukherjee, A. Dijkstra, and O. Moutanabbir* Atomically Uniform Sn-rich GeSn Semiconductors with 3.0-3.5 µm Room-Temperature Optical Emission Applied Physics LettersVol. 112, 251903 (2018).

A. Attiaoui, S. Wirth, A.-P. Blanchard-Dionne, M. Meunier, J.M. Hartmann, D. Buca, and O. Moutanabbir* Extreme IR Absorption in Group IV-SiGeSn Core-Shell Nanowires Journal of Applied PhysicsVol. 123, 223102 (2018).

S. Mukherjee, U. Givan, S. Senz, M. de la Mata, J. Arbiol, and O. Moutanabbir* Reduction of Thermal Conductivity in Nanowires by Combined Engineering of Crystal Phase and Isotope Disorder Nano LettersVol. 18, 3066 (2018).

M. Fortin-Deschênes and O. Moutanabbir* Recovering**Semiconductor Properties of Epitaxial Group V 2D Materials Antimonene and Arsenene Journal of Physical Chemistry CVol. 122, 9162 (2018).

S. Mukherjee, N. Nateghi, R.M. Jacobberger, E. Bouthillier, M. de la Mata, J. Arbiol, T. Coenen,D. Cardinal, P. Levesque, P. Desjardins, R. Martel, M. S. Arnold, and O. Moutanabbir* Growth and Luminescence of Polytypic InP on Epitaxial Graphene Advanced Functional MaterialsVol. 28, 1705592 (2018).

M. A. Mamun, K. Tapily, O. Moutanabbir, H. Baumgart, and A. A Elmustafa Effect of Hydrogen Implantation on the Mechanical Properties of AlN Throughout Ion-Induced Splitting ECS Journal of Solid State Science and TechnologyVol. 7, 180 (2018).

S. R. Sahamir, S. M. Said, M. F. M. Sabri, M. S. Mahmood, M. A. Kamarudin, and O. Moutanabbir Studies on Relation between Columnar Order and Electrical Conductivity in HAT6 Discotic Liquid Crystals using Temperature-Dependent Raman Spectroscopy and DFT Calculations Liquid Crystals Vol. 45, 522 (2018).

M. Fortin-Deschênes, O. Waller, T. Mentes, A. Locatelli, S. Mukherjee, F. Genuzio, P. Levesque, A. Hébert, R. Martel,and O. Moutanabbir† Synthesis of Antimonene on Germanium Nano Letters Vol. 17, 4970 (2017).

S. Mukherjee, N. Kodali, D. Isheim, D. N. Seidman, S. Wirth, J. M. Hartmann, D. Buca, and O. Moutanabbir† Short-Range Atomic Ordering in Nonequilibrium Silicon-Germanium-Tin Semiconductors Physical Review B (Rapid Communications) Vol. 95, 161402(R) (2017).

Z. Abboud and O. Moutanabbir† Temperature-dependent in situ studies of volatile molecule trapping in a low temperature-activated Zr alloy-based getters Journal of Physical Chemistry C Vol. 121, 3381 (2017).

D. Jung, J. Faucher, S. Mukherjee, A. Akey, D. J. Ironside, M. Cabral, X. Sang, J. Lebeau, S. R. Bank, T. Buonassisi, O. Moutanabbir, M. L. Lee Highly Tensile-Strained Ge/InAlAs Nanocomposites Nature Communications Vol. 8, 14204 (2017).

S. Mukherjee, H. Watanabe, D. Isheim, D. N. Seidman, and O. Moutanabbir† Mapping Isotopes in Nanoscale and Quantum Materials Using Atom Probe Tomography Microscopy and Microanalysis Vol. 22 (S3), 652-653 (2016).

M. Fortin-Deschênes, P. Levesque,R. Martel,and O. Moutanabbir† Dynamics and Mechanisms of Exfoliated Black Phosphorus Sublimation Journal of Physical Chemistry Letters Vol. 27, 205706 (2016).

O. Moutanabbir†, D. Isheim, Z. Mao, and D. N. Seidman Evidence of Sub-10 nm Aluminum-Oxygen Precipitates in Silicon Nanotechnology Vol. 27, 205706 (2016).

S. Mukherjee, H. Watanabe, D. Isheim, D. N. Seidman, and O. Moutanabbir† Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions Nano Letters Vol. 16, 1335 (2016).

D. Chagnon, E. Pippel, S. Senz, and O. Moutanabbir† Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport Journal of Physical Chemistry C Vol. 120, 2932 (2016).

S. Mukherjee, U. Givan, S. Senz, A. Bergeron, S. Francoeur, M. de la Mata, J. Arbiol, T. Sekiguti, K. M. Itoh, D. Isheim, D. N. Seidman, and O. Moutanabbir† Phonon Engineering in Isotopically Disordered Silicon Nanowires Nano Letters Vol. 15, 3885 (2015).

K. Scheerschmidt and O. Moutanabbir† Tracking atomic processes throughout the formation of heteroepitaxial interfaces Crystal Growth and Technology Vol. 50, 490 (2015). Invited Paper (70th birthday of Prof. Dr. Wolfgang Neumann).

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir* Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys Applied Physics Letters Vol. 106, 179901 (2015).

H. Blumtritt, D. Isheim, S. Senz, D. N. Seidman, and O. Moutanabbir† Preparation of Semiconductor Nanowire Specimens for Laser-Assisted Atom Probe Tomography Nanotechnology Vol. 25, 435704 (2014).

S. M. Lee, E. Pippel, O. Moutanabbir, J.-H. Kim, H.-J. Lee, and M. Knez Al-infiltrated Spider Dragline Silk and Its Molecular Deformation Behavior ACS Applied Materials & Interfaces Vol. 6, 16827 (2014).

A. Attiaoui and O. Moutanabbir† Indirect-to-Direct Band Gap Transition in Relaxed and Strained Ge1-x-ySixSny Ternary Alloys and Heterostructures Journal of Applied Physics Vol. 116, 063712 (2014).

M. V. Balois, A. Tarun, N. Hayazawa, S. Kawata, M. Reiche, and O. Moutanabbir† Direct Optical Mapping of Anisotropic Stresses in Nanowires using Transverse Optical Phonon Splittin**g Nano Letters Vol. 14, 3793 (2014).

G. Xiong, O. Moutanabbir, M. Reiche, R. Harder, and I. Robinson Coherent X-ray Diffraction Imaging and Characterisation of Strain in Silicon-on-Insulator Nanostructure**s Advanced Materials Vol. 26, 7747 (2014).

Peixuan Chen, J. J. Zhang, J. P. Feser, F. Pezzoli, O. Moutanabbir, S. Cecchi, G. Isella, T. Gemming, S. Baunack, G. Chen, O. G. Schmidt,  and A. Rastelli Cross-Plane Thermal Conductivity of Nanodot SiGe Superlattices: Effects of Ultra-Short Period Length, Nanodot Density and Matrix Ge Concentration Journal of Applied Physics Vol. 115, 044312 (2014). (.pdf)

U. Dadwal, P. Kumar, O. Moutanabbir, M. Reiche, and R. Singh, Effect of implantation temperature on the H-induced microstructural damage in AlN Journal of Alloys and Compounds Vol. 588, 300 (2014). (.pdf)

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir* Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys Applied Physics LettersVol. 103, 263103 (2013). (.pdf)

O. Moutanabbir†, D. Isheim, H. Blumtritt, S. Senz, E. Pippel, and D. N. Seidman Colossal Injection of Catalyst Atoms into Silicon Nanowires Nature Vol.496, 78 (2013). (.pdf) Highlighted in several media outlets, scientific journals and magazines

A. Tarun, N. Hayazawa, M. V. Balois, S. Kawata, M. Reiche, and O. Moutanabbir† Stress Redistribution in Individual Ultrathin Strained Silicon Nanowires: a High-Resolution Polarized Raman Study New Journal of Physics Vol. 15, 053042 (2013). (.pdf)

S. Essig, O. Moutanabbir, A. Wekkeli, H. Nahme, E. Oliva, F. Dimroth, A. W. Bett Fast Atom Beam Activated n-Si/n-GaAs Wafer Bonds with High Transparency and Electrical Conductivity Journal of Applied Physics Vol. 113, 203512 (2013). (.pdf)

Y. Qin, M. Eßlinger, R. Vogelgesang, W. Sigle, P. van Aken, O. Moutanabbir, and M. Knez Bottom-up Tailoring of Plasmonic Nanopeapods Making Use of the Periodical Topography of Carbon Nanocoil Templates Advanced Functional Materials Vol. 22, 5157 (2012). (.pdf)

X. Tong, Y. Qin, X. Guo, X. Ao, L. Zhang, E. Pippel, O. Moutanabbir, and M. Knez Enhanced Catalytic Activity for Methanol Electro-oxidation of Uniformly Dispersed Nickel Oxide Nanoparticle - Carbon Nanotube Hybrid Materials Small Vol. 8, 3390 (2012). (.pdf)

O. Moutanabbir†, F. Ratto, S. Heun, K. Sheerschmidt, A. Locatelli , and F. Rosei Dynamic Probe of Atom Exchange during Monolayer Growth Physical Review B – Rapid Communication Vol. 85, 201416(R) (2012). (.pdf)

A. Hähnel, M. Reiche, O. Moutanabbir, H. Blimtritt, H. Geisler, J. Hoentschel, and H.-J. Engelmann Improving Accuracy and Precision of Strain Analysis by Energy-Filtered Nanobeam Electron Diffraction Microscopy and Microanalysis Vol. 18, 229 (2012). (.pdf)

A. Tarun, N. Hayazawa, H. Ishitobi, S. Kawata, M. Reiche, O. Moutanabbir† Mapping the “Forbidden” Transverse-Optical Phonon in Single Strained Silicon (100) Nanowire Nano Letters Vol. 11, 4780 (2011). (.pdf)

G. Xiong, O. Moutanabbir†, X. Huang, S. A. Paknejad, X. Shi, R. Harder, M. Reiche, and I. K. Robinson Elastic Relaxation in an Ultrathin Strained Silicon-on-Insulator Structure Applied Physics Letters Vol. 99, 114103 (2011). (.pdf).

S. -M. Lee, V. Ischenko, E. Pippel, A. Mašić, O. Moutanabbir, P. Fratzl, and M. Knez An Alternative Route towards Metal-Polymer Hybrid Materials by Vapor Phase Processing Advanced Functional Materials Vol. 21, 3047 (2011). (.pdf).

O. Moutanabbir† Group-IV Epitaxial Quantum Dots: Growth Subtleties Unveiled through Stable Isotope Nanoengineering Science of Advanced Materials Vol. 3, 312 (2011). Invited Article. (.pdf)

Y. Qin, A. Pan, L. Liu, O. Moutanabbir, R. Yang, and M. Knez Atomic Layer Deposition Assisted Template Approach for Electrochemical Synthesis of Au Crescent-Shaped Half-Nanotubes ACS Nano Vol. 5, 788 (2011). (.pdf)

O. Moutanabbir†, S. Senz, R. Scholz, M. Alexe, Y. Kim, E. Pippel, Y. Wang, C. Wiethoff, T. Nabbefeld, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low-Temperature ACS Nano Vol. 5, 1313 (2011). (.pdf)

O. Moutanabbir†, D. Isheim, D. N. Seidman, Y. Kawamura, and K. M. Itoh Ultraviolet-Laser Assisted Atom Probe Tomographic Three-Dimensional Atom-by-Atom Mapping of Isotopically Modulated Si Nanoscopic Layers Applied Physics Letters Vol. 98, 013111 (2011). (.pdf) Selected for the January 24, 2011 issue of Virtual Journal of Nanoscale Science & Technology. Selected as Research Highlight by Nature Photonics Vol. 5, 129 (2011). (.pdf)

M. Elsayed, R. Krause-Rehberg, O. Moutanabbir†, W. Anwand, S. Richter, and C. Hagendorf Cu Diffusion-Induced Vacancy-Like Defects in Freestanding GaN New Journal of Physics Vol. 13, 013029 (2011). (.pdf)

 O. Moutanabbir†, M. Reiche, N. Zakharov, F. Naumann, and M. Petzold Observation of Free Surface-Induced Bending upon Nanopatterning of Ultrathin Strained Silicon Layer Nanotechnology Vol. 22, 045701 (2011). (.pdf)

O. Moutanabbir†, M. Reiche, A. Hähnel, M. Oehme, and E. Kasper Multiwavelength Micro-Raman Analysis of Strain in Nanopatterned Ultrathin Strained Silicon-On-Insulator Applied Physics Letters Vol. 97, 053105 (2010). (.pdf)

S. Miyamoto, O. Moutanabbir†, T. Ishikawa, M. Eto, E. E. Haller, K. Sawano, Y. Shiraki, and K. M. Itoh Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Self-Assembled Type-II Quantum Dot Physical Review B Vol. 82, 073306 (2010). (.pdf) Selected for the August 17, 2010 issue of Virtual Journal of Nanoscale Science & Technology.

O. Moutanabbir†, S. Miyamoto, E. E. Haller, and K. M. Itoh Transport of Deposited Atoms throughout Strain-Mediated Self-Assembly Physical Review Letters Vol. 105, 026101 (2010). (.pdf)

O. Moutanabbir†, M. Reiche, A. Hähnel, W. Erfurth, M. Motohashi, A. Tarun, N. Hayazawa, and S. Kawata UV-Raman Imaging of the In-Plane Strain in Single 15 nm-Thick Strained Silicon-On-Insulator Patterned Structures Applied Physics Letters Vol. 96, 233105 (2010). (.pdf)

R. B. Yang, N. Zakharov, O. Moutanabbir, K. Scheerschmidt, L. M. Wu, U. Gösele, J. Bachmann, and K. Nielsch The Transition between Conformal Atomic Layer Epitaxy and Anisotropic Nanowire Growth Journal of the American Chemical Society (Communication) Vol 132, 7592 (2010). (.pdf)

O. Moutanabbir† and U. Gösele Bulk GaN Ion Cleaving Journal of Electronic Materials Vol. 39, 482 (2010). (.pdf)

O. Moutanabbir†, M. Reiche, A. Hähnel, W. Erfurth, U. Gösele, M. Motohashi, A. Tarun, N. Hayazawa, and S. Kawata Nanoscale Patterning-Induced Strain Redistribution in Ultrathin Strained Si Layer on Oxide Nanotechnology Vol. 21, 134013 (2010). (.pdf)

O. Moutanabbir† and U. Gösele Heterogeneous Integration of Compound Semiconductors Annual Review of Materials Research Vol. 40, 469 (2010). Invited Review. (.pdf)

O. Moutanabbir†, R. Scholz, U. Gösele, A. Guittoum, M. Jungmann, M. Butterling, R. Krause-Rehberg, W. Anwand, W. Egger, and P. Sperr Experimental Elucidation of Vacancy Complexes Associated with Hydrogen Ion-Induced Splitting of Bulk GaN Physical Review B Vol. 81, 115205 (2010). (.pdf)

S. -M. Lee, E. Pippel, O. Moutanabbir, I. Gunkel, T. Thurn-Albrecht, and M. Knez Improved Mechanical Stability of Dried Collagen Membrane after Metal Infiltration ACS Applied Materials and Interfaces Vol. 2 (8), 2436 (2010). (.pdf)

R. Singh, S. Christiansen, O. Moutanabbir, and U. Gösele The Phenomenology of Ion Implantation-Induced Blistering and Thin Layer Splitting in Compound Semiconductors Journal of Electronic Materials Vol. 39, 2177 (2010). Invited Article. (.pdf)

O. Moutanabbir†, S. Senz, Z. Zhang, and U. Gösele Synthesis of Isotopically Controlled Metal-Catalyzed Silicon Nanowires Nano Today (Rapid Communication) Vol. 4, 393 (2009). (.pdf)

O. Moutanabbir†, M. Reiche, W. Erfurth, F. Naumann, M. Petzold, and U. Gösele The Complex Evolution of Strain during Nanoscale Patterning of 60 nm-Thick Strained Silicon Layer Directly on Insulator Applied Physics Letters Vol. 94, 243113 (2009). (.pdf) Selected for the June 20, 2009 issue of Virtual Journal of Nanoscale Science & Technology.

O. Moutanabbir†, R. Scholz, U. Gösele, and B. Terreault Facile Synthesis of Highly Stable a-Si by Implantation of Low-keV H Isotopes Physical Review B Vol. 79, 233202 (2009). (.pdf)

S. Miyamoto, O. Moutanabbir†, E. E. Haller, and K. M. Itoh Spatial Correlation of Self-Assembled Isotopically Pure Ge/Si(001) Nanoislands Physical Review B Vol. 79, 165415 (2009). (.pdf) Selected for the April 20, 2009 issue of Virtual Journal of Nanoscale Science & Technology.

O. Moutanabbir†, Y. J. Chabal, M. Chicoine, S. Christiansen, R. Krause-Rehberg, F. Schiettekatte, R. Scholz, O. Seitz, S. Senz, F. Süßkraut, and U. Gösele Mechanisms of Ion-Induced GaN Thin Layer Splitting Nuclear Instruments and Methods in Physics Research B Vol. 267, 1264 (2009). (.pdf)

O. Moutanabbir†, S. Senz, R. Scholz, M. Reiche, S. Christiansen, A. Avramescu, U. Strauss, and U. Gösele Stress Adjustment and Bonding of H-Implanted 2-inch Freestanding GaN Wafer: The Concept of Double-Sided Splitting Electrochemical and Solid-State Letters Vol. 12, H105 (2009). (.pdf)

O. Moutanabbir†, S. Miyamoto, A. Sagara, H. Oshikawa, K. M. Itoh Tuning the Luminescence Emission of {105}-Faceted Ge Quantum Dots Superlattice using Proton Implantation and Thermal Annealing Thin Solid Films Vol. 517, 391 (2008). (.pdf)

O. Moutanabbir†, R. Scholz, S. Senz, U. Gösele, M. Chicoine, F. Schiettekatte, F. Süßkraut, and R. Krause-Rehberg Microstructural Evolution in H ion Induced Splitting of Freestanding GaN Applied Physics Letters Vol. 93, 031916 (2008). (.pdf)

F. Ratto, S. Heun, O. Moutanabbir, and F. Rosei in situ Nanoscale Mapping of the Chemical Composition of Surfaces and 3D Nanostructures by Photoelectron Spectromicroscopy Nanotechnology Vol. 19, 265703 (2008). (.pdf)

P. J. Simpson, A. P. Knights, M. Chicoine, K. Dudeck, O. Moutanabbir, S. R. Ruffell, F. Schiettekatte, B. Terreault Thermal Evolution of Defects Produced by Implantation of H, D and He in Silicon Applied Surface Science Vol. 255, 63 (2008). (.pdf)

C. Himcinschi, R. Singh, O. Moutanabbir, R. Scholz, M. Reiche, S.H. Christiansen, U. Gösele, and D.R.T. Zahn Etching-Back of Uniaxially Strained Silicon on Insulator Investigated by Spectroscopic Ellipsometry Physica Status Solidi A Vol.205, 841 (2008). (.pdf)

J.T. Robinson, F. Ratto, O. Moutanabbir, S. Heun, A. Locatelli, T. O. Mentes, L. Aballe, and O. D. Dubon Gold-Catalyzed Oxide Nanopatterning for the Directed Assembly of Ge Islands on Si Nano Letters  Vol. 7, 2655 (2007). (.pdf)

O. Moutanabbir†, S. Miyamoto, A. Fujimoto, and K. M. Itoh Isotopically Controlled Self-Assembled Ge/Si Nanostructures Journal of Crystal Growth Vol. 301-302, 324 (2007). (.pdf)

O. Moutanabbir†, B. Terreault, M. Chicoine, F. Schiettekatte, and P. J. Simpson Influence of Isotopic Substitution and He Co-Implantation on Defect Complexes and Voids Induced by H Ions in Silicon Physical Review B Vol. 75, 075201 (2007). (.pdf)

O. Moutanabbir†, B. Terreault, M. Chicoine, P. J. Simpson, T. Zahel and G. Hobler Hydrogen/Deuterium-Defect Complexes Involved in the Ion-Cutting of Si(001) Substrates at the Sub-100 nm Physica B Vol. 376-377, 36 (2006). (.pdf)

N. Desrosiers, A. Giguere, O. Moutanabbir, B. Terreault Ion Blistering of Boron-Doped Silicon: The Critical Role of Defect Passivation Applied Physics Letters Vol. 87, 231908 (2005). (.pdf)

O. Moutanabbir and B. Terreault Effects in Synergistic Blistering of Silicon by Co-Implantation of H, D and He Ions Applied Physics Letters Vol. 86, 051906 (2005). (.pdf)

O. Moutanabbir†, B. Terreault, M. Chicoine, and F. Schiettekatte The Fluence Effect in Hydrogen Ion Cleaving of Silicon at sub-100nm-scale Applied Physics A Vol. 80, 1455 (2005). (.pdf)

O. Moutanabbir† and B. Terreault Raman Scattering Elucidation of The Giant Isotope Effect in Hydrogen Ion Blistering of Silicon Journal of Chemical Physics Vol. 121, 7973 (2004). (.pdf)

O. Moutanabbir†, A. Giguère and B. Terreault Narrow Fluence Window and Giant Isotope Effect in Low-Energy Hydrogen Blistering of Silicon Applied Physics Letters Vol. 84, 3286 (2004). (.pdf)

O. Moutanabbir†, B. Terreault and G. G. Ross Isotope and Crystal Orientation Effects in low-energy H/D blistering of Si Applied Physics Letters Vol. 82, 4675 (2003). (.pdf)

J.-H. Fournier-Lupien, D. Chagnon, P. Levesque, S. Wirths, E. Pippel, G. Mussler, J. M. Hartmann, S. Mantl, Desjardins, D. Buca, and O. Moutanabbir in situ Studies of GeSn and SiGeSn Thermal Stability The 226th Meeting of the Electrochemical Society, Symposium: SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Cancun, Mexico, Oct. 5-10, 2014. (Oral).

A. Attiaoui and O. Moutanabbir Optical and Electronic Properties of GeSn and GeSiSn Heterostructures and Nanowires The 226th Meeting of the Electrochemical Society, Symposium: SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Cancun, Mexico, Oct. 5-10, 2014. (Oral).

D. Chagnon, D. Isik, P. Levesque, F. Lewis, R. Larger, J.-S. Poirier, M. Caza, X. Le, D. Michel, and O. Moutanabbir Materials Issues in Hermetic Wafer Level Packaging using Au Thermocompression and Au-Sn Transient Liquid Phase Bonding The 226th Meeting of the Electrochemical Society, Symposium: Semiconductor Wafer Bonding: Science, Technology and Applications XIII Cancun, Mexico, Oct. 5-10, 2014. (Oral).

O. Moutanabbir Heterointegration of Semiconductors: Challenges and Opportunities The 226th Meeting of the Electrochemical Society, Symposium: Semiconductor Wafer Bonding: Science, Technology and Applications XIII Cancun, Mexico, Oct. 5-10, 2014. (Invited).

O. Moutanabbir Nanowires with Tailor-Made Isotopic Compositions Nanowires 2014 (International Workshop on Nanowires) Eindhoven, The Netherlands, Aug. 25-29, 2014. (Invited).

A. Tarun, N. Hayazawa, M. V. Baloisa, S. Kawata, M. Reiche, and O. Moutanabbir Unravelling the complexity of anisotropic stress in ultrathin strained silicon nanowires The 24th International Conference of Raman Spectroscopy (ICORS 2014) Jena, Germany, Aug. 10-15, 2014. (Oral).

D. Chagnon, D. Isik, P. Levesque, F. Lewis, R. Larger, J.-S. Poirier, M. Caza, X. Le, D. Michel, and O. Moutanabbir Metal-Assisted Wafer-Level Packaging: Design and Materials Challenges The 4th International IEEE Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2014 Tokyo, Japan, Jul. 15-16, 2014. (Invited).

O. Moutanabbir Atomistic Studies of Semiconductor Nanowires The Congress of the Canadian Association of Physicists Sudbury, Ontario, Canada, Jun. 16-20, 2014. (Invited).

S.-M. Lee, E. Pippel, O. Moutanabbir, J.-H. Kim, H.-J. Lee, and M. Knez Al-infiltrated Spider Dragline Silk and Its Molecular Deformation Behavior The European Materials Research Society Spring Meeting, Symposium Q: Hybrid materials engineering in biology, chemistry and physics Lille, France, May 26-30, 2014. (Oral).

O. Moutanabbir Ion Slicing of III-Nitride Bulk Wafers The 23rd International Conference on the Application of Accelerators in Research and Industry San Antonio, Texas, USA, May 25-30, 2014. (Invited).

O. Moutanabbir 3D Atom*‐by‐*Atom Mapping of Electronic Materials and Nanostructures The 38th International Conference and Expo on Advanced Ceramics and Composites, the American Ceramic Society Dayton Beach, Florida, USA, Jan. 26-31, 2014. (Invited).

O. Moutanabbir Atomistic Studies of Nanowires The 17th International Workshop on The Physics of Semiconductor Devices Noida, India, Dec. 10-13, 2013. (Invited).

O. Moutanabbir Catalytic Assembly of Nanowires: Growth, Defect Engineering, and Impurity Trapping The Materials Science & Technology 2013 Conference & Exhibition Montreal, Canada, Oct. 27-31, 2013. (Invited).

S. Mukherjee and O. Moutanabbir Isotopically Engineered Silicon Nanowires The Materials Science & Technology 2013 Conference & Exhibition Montreal, Canada, Oct. 27-31, 2013. (Oral).

D. Chagnon, O. Marchand Lemire and O. Moutanabbir Role of Catalyst Dissolution in Shaping VLS Grown Nanowires The Materials Science & Technology 2013 Conference & Exhibition Montreal, Canada, Oct. 27-31, 2013. (Oral).

A. Tarun, N. Hayazawa, S. Kawata, M. V. Balois, and O. Moutanabbir Local Stresses in Nanowires Unraveled by Raman Spectroscopy 7thInternational Conference on Advanced Vibrational Spectroscopy Kobe, Japan, Aug. 25-30, 2013. (Invited).

O. Moutanabbir Mass Transport throughout the Catalytic Assembly of Nanowires The XXII International Materials Research Congress Cancun, Mexico, Aug. 11-17, 2013. (Invited).

D. Chagnon and O. Moutanabbir Modeling Nanowire Growth via Shrinking Catalyst Nanodroplets The 25th Canadian Materials Science Conference Montreal, Canada, Jun. 17-19, 2013. (Oral).

D. Chagnon and O. Moutanabbir Dissolution of Nanodroplets throughout Metal-Catalyzed Growth of Nanowires The Canadian Association of Physicists Congress 2013 Montreal, Canada, May 27-31, 2013. (Oral).

S. Mukherjee and O. Moutanabbir Phonon Engineering in Silicon Nanowires using Stable Isotopes The Canadian Association of Physicists Congress 2013 Montreal, Canada, May 27-31, 2013. (Oral).

K. Sheerschmidt and O. Moutanabbir On the Genesis of Ge/Si Epitaxial Interfaces: Tracking the Behavior of Deposited Atoms Using Molecular Dynamics with Analytic Bond Order Potentials 6th International Conference on Multiscale Materials Modeling Singapore, Oct. 15-19, 2012. (Oral).

G. Xiong, O. Moutanabbir, X. Huang, X. Shi, M. Reiche, R. Harder, and I. K. Robinson Strain relaxation in an ultra-thin strained-silicon-on-insulator structure due to nanoscale patterning 11th International Conference on X-ray Microscopy Shanghai, China, Aug. 5-10, 2012. (Oral).

O. Moutanabbir Nanoscale and Hybrid Semiconductors Meeting of the International Union of Materials Research Societies - ICYRAM 2012 Singapore, July 1-6, 2012. (Invited).

H. Baumgart and O. Moutanabbir Heterointegration of compound III-V semiconductors by wafer bonding and layer splitting for optoelectronic applications 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Tokyo, Japan, May 23-23, 2012. (Invited).

A. Senichev, U. Givan, O. Moutanabbir, V. Talalaev, and P. Werner Near-field Scanning Optical Microscopy of Infrared Emitting Semiconductor Nanostructures 76th Annual Meeting of the DPG and DPG Spring Meeting Berlin, Germany, Mar. 25-30, 2012. (Poster).

C. Wright, M. Mamun, K. Tapily, O. Moutanabbir**,** D. Gu, H. Baumgart, and A. Elmustafa NanoMechanical Properties of Hydrogen Implanted AlN for Layer Transfer by Ion-Induced Splitting TMS 141st Annual Meeting and Exhibition Orlando, Florida, USA, Mar. 11-15, 2012. (Poster).

O. Moutanabbir Shedding New Light on Nanomaterials 10th Symposium on NanoPhotonics and Metamaterials Tokyo, Japan, Feb. 29, 2012. (Invited).

U. Givan and O. Moutanabbir Phonon Engineering in Silicon Nanowires Using Stable Isotopes Materials Research Society Fall Meeting Symposium W: Phonons in Nanomaterials─Theory, Experiments, and Applications Boston USA, Nov. 28-Dec. 2, 2011. (Oral).

O. Moutanabbir, D. Isheim, and D. N. Seidman 3D Atom-by-Atom Imaging of Semiconductor Nanomaterials and Interfaces Materials Research Society Fall Meeting Symposium PP: Three-Dimensional Tomography of Materials Boston USA, Nov. 28-Dec. 2, 2011. (Oral).

O. Moutanabbir Advanced Nanoscale and Hybrid Materials for Flexible Electronics, Photonics, Renewable Energy, and Bio-integrated Technologies 1st Canada-Japan Nanotechnology Workshop Waterloo, Ontario, Canada, Nov. 22-23, 2011. (Invited).

A. Tarun, N. Hayazawa, S. Kawata, and O. Moutanabbir Probing Transverse-Optical Phonons in Strained Si Nanowire: Strain Profiles and Nanomechanical properties The 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan, 28-30 September 2011. (Oral).

O. Moutanabbir Mapping Strain and Impurities in Semiconductor Nanowires The Fourth Meeting - Nanowires 2011 (NW2011) Plomari-Lesvos, Greece, 13-19 June 2011. (Invited).

O. Moutanabbir TO and LO Phonons Profiles in Single Strained Silicon Nanowires Strained Germanium The 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7) Sendai, Japan, 22-26 May 2011 (moved to Leuven, Belgium). (Oral).

O. Moutanabbir Strain Nano-Engineering: SSOI as a Playground The 219th Meeting of the Electrochemical Society Symposium E8: Advanced Semiconductor-on-Insulator Technology and Related Physics 15 Montreal, Quebec, Canada, 1–6 May, 2011. (Oral).

O. Moutanabbir, D. Isheim, Y. Kawamura, K. M. Itoh, and D. N. Seidman Sub-Nanometer Resolution 3D Mapping of Isotopically Modulated Si Multilayers by Atom-Probe Tomography 2011 TMS Annual Meeting & Exhibition, Symposium: 2011 Functional and Structural Nanomaterials: Fabrication, Properties, Applications and Implications San Diego, California, USA, Feb. 27 – Mar. 3, 2011. (Oral).

O. Moutanabbir, D. Isheim, H. Blumtritt, U. Gösele, and D. N. Seidman Atom-Probe Tomographic Analyses of Al-catalyst Grown Si Nanowires Materials Research Society Fall Meeting Symposium W: Nanowires - Growth and Device Assembly for Novel Applications Boston USA, Nov. 29 – Dec. 3, 2010. (Oral).

H. Blumtritt and O. Moutanabbir FIB-based preparation of nanowire specimens for 3D atom probe tomographic imaging European FIB SDB user meeting Eindhoven, The Netherlands, 25-27 October 2010. (Poster).

O. Moutanabbir Heterointegration of Compound Semiconductors by Ultrathin Layer Splitting The 218th Meeting of the Electrochemical Society Symposium E12: State-of-the-Art Program on Compound Semiconductors 52 Las Vegas, Nevada, USA, 10-15 October 2010. (Invited).

O. Moutanabbir**,** M. Reiche, A. Hahnel, W. Erfurth, M. Motohashi, A. Tarun, N. Hayazawa, S. Kawata, F. Naumann, M. Petzold, M. Holt, and J. Maser Strain Stability in Nanoscale Patterned Strained Silicon-on-Insulator The 218th Meeting of the Electrochemical Society Symposia E14-E22: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 4 Las Vegas, Nevada, USA, 10-15 October 2010. (Oral).

O. Moutanabbir Ion-Cut from Smart to Smarter Ulrich Gösele (1949-2009) – In Memoriam The 218th Meeting of the Electrochemical Society Symposium E11 - Semiconductor Wafer Bonding 11: Science, Technology, and Applications Las Vegas, Nevada, USA, 10-15 October 2010. (Invited).

O. Moutanabbir**,** S. Senz, M. Alexe, Y. Kim, R. Scholz, H. Blumtritt, C. Wiethoff, T. Nabbefeld, F. -J. Meyer zu Heringdorf, and M. Horn-von Hoegen, D. Isheim, D. N. Seidman The Role of Aluminum Catalyst Atoms in Shaping the Structural and Electrical Properties of Silicon Nanowires 2010 International Conference on Solid State Devices and Materials (SSDM 2010) Tokyo, Japan, 22-24 September 2010. (Oral).

O. Moutanabbir Strain stability in SSOI nanodevices The 5th International SiGe Technology and Device Meeting (ISTDM) KTH, Royal Institute of Technology,  Stockholm, Sweden, 24-26 May 2010. (Oral).

O. Moutanabbir Proton beam-induced thin layer splitting: Hybrid devices and underlying physics Ion Beam Physics Workshop Forschungszent rum Dresden-Rossendorf FZD, Dresden, Germany, 29-31 March 2010. (Oral).

O. Moutanabbir, S. Senz, and U. Goesele A novel family of silicon nanowires by the controlled manipulation of the isotopic composition Materials Research Society Fall Meeting Symposium M: Multifunction at the Nanoscale through Nanowires Boston USA, Nov. 30 – Dec. 4, 2009 (Oral).

O. Moutanabbir, M. Reiche, A. Hähnel, W. Erfurth, U. Goesele, M. Motohashi, A. Tarun, N. Hayazawa, and S. Kawata, M. Holt, and J. Maser Wafer-level Strained Silicon: Fabrication and Stability upon Nanoscale Patterning Materials Research Society Fall Meeting Symposium C: Large-Area Processing and Pattering for Optical, Photovoltaic, and Electronic Devices III Boston USA, Nov. 30 – Dec. 4, 2009 (Poster).

O. Moutanabbir, M. Reiche, N. Zakharov, A. Hähnel, W. Erfurth, F. Naumann, M. Petzold, M. Holt, J. Maser, and U. Goesele Probing the strain states in nanopatterned strained SOI The 216th Meeting of the Electrochemical Society Vienna, Austria, October 4-9, 2009. (Oral).

O. Moutanabbir, M. Reiche, U. Goesele, J. Hoentschel, and M. Horstmann Strained Silicon Devices Gettering and Defect Engineering in Semiconductor Technology, XIII International Autumn Meeting Berlin, Germany, September 29 – October 2, 2009. (Invited).

O. Moutanabbir, M. Reiche, N. Zakharov, A. Hähnel, W. Erfurth, F. Naumann, M. Petzold, M. Holt, J. Maser, and U. Goesele Nanoscale patterning-induced strain relaxation in strained Si ultra thin layer directly on oxide Nano and Giga Challenges in Electronics, Photonics and Renewable Energy/14th Canadian Semiconductor Technology Conference Hamilton, Ontario, Canada, August 10-14, 2009. (Poster).

O. Moutanabbir Germanium and silicon stable and enriched isotopes in nanoscience Nano and Giga Challenges in Electronics, Photonics and Renewable Energy/14th Canadian Semiconductor Technology Conference Hamilton, Ontario, Canada, August 10-14, 2009. (Oral).

O. Moutanabbir Isotopically controlled semiconductor low dimensional structures TMS 51st Electronic Materials Conference, Symposium: Low-Dimensional Structures: Quantum Dots, Wires, and Wells University Park, Pennsylvania, USA, 24-26 June , 2009. (Oral).

O. Moutanabbir, M. Reiche, N. Zakharov, A. Hähnel, W. Erfurth, F. Naumann, M. Petzold and U. Goesele Unveiling the complex evolution of strain in nanopatterned strained Si membrane directly on oxide TMS 51st Electronic Materials Conference, Symposium:Materials Integration: Wafer Bonding and Engineered Substrates University Park, Pennsylvania, USA, 24-26 June , 2009. (Oral).

O. Moutanabbir**,** Y. J. Chabal, M. Chicoine, R. Krause-Rehberg, R. Scholz, O. Seitz, S. Senz, and U. Goesele The role of atomic displacements and vacancy complexes in hydrogen ion-induced GaN thin layer exfoliation TMS 51st  Electronic Materials Conference, Symposium: Point Defects, Extended Defects, and Doping in Wide Bandgap Materials University Park, Pennsylvania, USA, 24-26 June , 2009. (Oral).

O. Moutanabbir Semiconductor stable isotopes in nanoscience 2009 the Canadian Association of Physicists Congress Université de Moncton, Moncton, New Brunswick, Canada, 7-10 June , 2009. (Oral).

S. Miyamoto, O. Moutanabbir, E. E. Haller, and K. M. Itoh Nucleation and mass transport in strain-driven islanding studied by combination of Voronoi tessellation and Ge enriched isotope The 6th International Conference on Silicon Epitaxy and Heterostructures Los Angeles, USA, 17-22 May 2009. (Oral)

O. Moutanabbir**,** S. Senz, M. Alexe, Y. Wang, R. Scholz, H. Blumtritt, U. Gösele, D. Isheim, D. N. Seidman, C. Wiethoff, T. Nabbefeld, Frank -J. Meyer zu Heringdorf, and M. Horn-von Hoegen Properties of Si nanowires catalyzed by Al The 6th International Conference on Silicon Epitaxy and Heterostructures Los Angeles, USA, 17-22 May 2009. (Oral).

O. Moutanabbir, M. Reiche, N. Zakharov, A. Hähnel, W. Erfurth, F. Naumann, M. Petzold and U. Goesele Nanopattering-induced strain redistribution in ultra thin strained Si membrane directly on oxide The 6th International Conference on Silicon Epitaxy and Heterostructures Los Angeles, USA, 17-22 May 2009. (Oral)

O. Moutanabbir and U. Goesele Wafer bonding and ion-slicing as a strategy for breaking the trade-off between quality and cost in the fabrication of compound semiconductor multi-junction solar cells Materials Research Society Spring Meeting Symposium M: Thin-Film Compound Semiconductor Photovoltaics San Francisco USA, 13-17 April 2009. (Poster).

O. Moutanabbir**,** S. Senz, M. Alexe, Y. Wang, R. Scholz, H. Blumtritt, U. Gösele, D. Isheim, D. N. Seidman, C. Wiethoff, T. Nabbefeld, Frank -J. Meyer zu Heringdorf, and M. Horn-von Hoegen Superior structural and electrical properties of UHV-CVD grown Si nanowires catalyzed by Al Materials Research Society Spring Meeting Symposium AA: Semiconductor Nanowires -- Growth, Size-Dependent Properties, and Applications San Francisco USA, 13-17 April 2009 (Oral).

O. Moutanabbir, M. Reiche, W. Erfurth, R. Scholz, N. Zakharov, F. Naumann, M. Petzold and U. Goesele Strained Silicon-On-Insulator 2009 EuroSOI Fifth Workshop of the Thematic Network on Silicon on Insulator technology, devices, and circuits Göteberg, Sweden, 19-21 January 2009. (Oral).

O. Moutanabbir III-V and III-nitride engineered heterostructures: wafer bonding, ion slicing, and more The 214th Meeting of the Electrochemical Society Honolulu, Hawaii USA, 12-17 October 2008. (Invited).

O. Moutanabbir, M. Reiche, W. Erfurth, R. Scholz, and U. Goesele Strain relaxation in nanostructured ultra thin SSOI 2008 IEEE International SOI conference Hudson River Valley, New York USA, 6-9 October 2008. (Poster).

O. Moutanabbir, S. Christiansen, A. Berger, R. Scholz, R. Singh, U. Goesele, H. Behmenburg, C. Mauder, H. Kalisch, R. H. Jansen, K. Christiansen, and M. Heuken InGaN/GaN LED structures on LiAlO2 substrates by MOCVD and a novel approach for more reliable templates by wafer bonding and layer transfer The International Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland, 6-10 October 2008. (Poster).

O. Moutanabbir, B. Terreault, and A. Giguere Amorphisation versus sub-100-nm exfoliation in hydrogen ion-implanted silicon International Conference on “Extended Defects in Semiconductors” (EDS 2008) Poitiers, France, 14-19 September 2008 (Oral).

O. Moutanabbir, Y. J. Chabal, M. Chicoine, S. Christiansen, R. Krause-Rehberg, F. Schiettekatte, R. Scholz, O. Seitz, S. Senz, F. Süßkraut, and U. Goesele Mechanisms of ion-induced GaN thin layer splitting The 16th International Conference on Ion Beam Modification of Materials (IBMM 2008) Dresden, Germany, August 31 - September 5 2008. (Poster).

O. Moutanabbir, R. Scholz, S. Christiansen, U. Goesele, M. Chicoine, R. Krause-Rehberg, and Y. J. Chabal Heterogeneous integration of wide band gap materials Materials Research Society Spring Meeting Symposium C: Advances in GaN, GaAs, SiC, and Related Alloys on Silicon San Francisco USA, 24-28 March 2008. (Oral)

O. Moutanabbir, T. Kawamura, S. Miyamoto, S. Kimura, M. Mizumaki, and K.M. Itoh Anomalous x-ray scattering 3D mapping of strain and composition of Ge/Si shrinking islands during the initial stage of Si overgrowth The 5th International Conference on Silicon Epitaxy and Heterostructures Marseille, France, 19-25 May 2007. (Poster)

O. Moutanabbir, A. Sagara, S. Miyamoto, H. Oshikawa, K. M. Itoh Tuning the luminescence emission of {105}-faceted Ge QDs superlattice using proton implantation and thermal annealing The 5th International Conference on Silicon Epitaxy and Heterostructures Marseille, France, 19-25 May 2007. (Poster)

O. Moutanabbir, S. Miyamoto, and K.M. Itoh Artificial manipulation of the isotopic composition of Ge-Si epitaxial nanostructures The 5th International Conference on Silicon Epitaxy and Heterostructures Marseille, France, 19-25 May 2007. (Oral)

O. Moutanabbir and B. Terreault Extrapolation de la technologie SOI sous les 100 nonomètres: Procédé Smart-Cut® à basse énergie? ACFAS 72nd Congress Université du Québec à Montréal,  10-14 May 2004 (in French). (Oral)

O. Moutanabbir and B. Terreault Modification de surface du silicium monocristallin par faisceau de protons: application à la fabrication des substrats SOI ultra minces ACFAS 72nd Congress Université du Québec à Montréal,  10-14 May 2004 (in French). (Oral)

O. Moutanabbir, E. Shaffer, B. Terreault, and G. G. Ross Isotope and dose effects in low-energy H/D blistering of silicon: Narrow operational window for ion-cutting at < 100 nm Materials Research Society Fall Meeting Boston USA, 1-5 Dec. 2003. (Poster)

O. Moutanabbir and B. Terreault Narrow operational window for ion-cutting of silicon below 100 nm Quebec-New York Nanotechnology Workshop University of Sherbrooke, Sherbrooke Canada, 13 Nov. 2003. (Poster)

O. Moutanabbir, N. Desrosiers, and B. Terreault Arrays of Sub-100-nm Blisters and Craters Produced by Low keV Ion Implantation The Canadian Association of Physicists Congress University of Prince Edward Island Canada, 8-11 June 2003. (Oral)

O. Moutanabbir, N. Desrosiers, and B. Terreault Blistering of hydrogen implanted silicon at low energy: Ultra thin SOI substrates ACFAS 71st Congress Université du Québec à Rimouski, Rimouski Canada, 19-23 May 2003 (in French). (Oral)

J. T. Robinson, O. Moutanabbir, F. Ratto, S. Heun, M. Tonezzer, A. Locatelli, O. T. Mentes, L. Aballe, A. Liddle, K. M. Itoh, and O.D. Dubon X-ray Spectromicroscopy Mapping of Metal-Induced Ordering of Semiconductor Nanostructures the 10th ISSP International Symposium (ISSP-10): Nanoscience on Surfaces Kashiwa, Chiba, Japan, 9-13 October 2006. (Poster)

O. Moutanabbir, S. Miyamoto, and K.M. Itoh Subtleties in the epitaxial growth of Ge/Si nanostructures revealed by Raman scattering in combination with stable isotopes tracing The 2nd International Workshop on New Group IV Semiconductor Nanoelectronics Tohoku University, Sandai, Japan, October 2-3, 2006. (Poster)

O. Moutanabbir, S. Miyamoto, A. Fujimoto, and K.M. Itoh Isotopically Controlled Self-assembled Ge/Si Nanostructures The 14th International Conference on Molecular Beam Epitaxy (MBE2006) Tokyo, Japan, 3-8 September 2006. (Oral)

O. Moutanabbir, S. Miyamoto, and K.M. Itoh Pure Germanium Isotopes for Investigating Interdiffusion in Uncapped Self-Assembled Ge/Si Nanostructures Materials Research Society Spring Meeting Symposium I “Silicon-Based Microphotonics” San Francisco USA, 7-21 April 2006. (Oral)

O. Moutanabbir, S. Miyamoto, and K.M. Itoh Critical Issues in Self-Assembled Ge/Si Quantum Dots The 3rd International Conference of the African Materials Research Society Marrakech, Morocco, December 7-10, 2005. (Oral)

O. Moutanabbir Surprising effects in hydrogen ion cleaving and texturing of silicon at sub-100 nm scale The 3rd International Conference of the African Materials Research Society Marrakech, Morocco, December 7-10, 2005. (Invited*)*

O. Moutanabbir, B. Terreault, M. Chicoine, P. J. Simpson, T. Zahel, and G. Hobler Hydrogen/Deuterium-defect complexes involved in the ion-cutting of Si(001) substrates at the sub-100 nm The 23rd International Conference for Defects in Semiconductors Awaji Islands, Japan, July 2005. (Oral)

O. Moutanabbir, B. Terreault, N. Desrosiers, A. Giguère, G. G. Ross, M. Chicoine, and F. Schiettekatte Hydrogen Cleaving of Silicon at the Sub-100-nm Scale The 27th International Conference on the Physics of Semiconductors Flagstaff, Arizona, July 26-30 2004. (Poster)

O. Moutanabbir, N. Desrosiers, and B. Terreault Ion-induced texturing and slicing of silicon at the sub-100-nm scale The American Physical Society March Meeting Montreal Canada, 22-26 March 2004. (Oral)